Micron unveils 176-layer NAND Flash storage

31st July 2021
Micron unveils 176-layer NAND Flash storage

Image: Bottom Left: the 176-layer Micron NAND chip. Right: Micron LPDDR5 accelerates  mobile phone functions.
July 31 2021: though launch of services is at least a year away, a wave of innovation is already starting to hit our shores --5G-enabled smartphones.
But a new way of thinking is required to converge mobile, 5G and artificial intelligence (AI) technologies. We need a holistic approach where higher memory bandwidth and capacity combine with lower latency and lower power.
Micron’s mobile memory and storage leadership makes it possible to unleash the full potential of 5G experiences.  They were first to mass production in LPDDR5 and first to market with uMCP5 technology for 5G, and now Micron Technology,  has announced that it has begun volume shipments of the world’s first 176-layer NAND Universal Flash Storage (UFS) 3.1 mobile solution. Engineered for high-end and flagship phones, Micron’s discrete UFS 3.1 mobile NAND unlocks 5G’s potential with up to 75% faster sequential write and random read performance than prior generations,  enabling downloads of two-hour 4K movies in as little as 9.6 seconds. It ffers a compact design ideal for the high capacity, small form factors required in mobile devices.
This launch follows quickly on the heels of Micron’s volume delivery of PCIe Gen4 solid -state drives with 176-layer NAND in June, bringing high performance, design flexibility and low power consumption to professional workstations and ultrathin notebooks. Now available for smartphones, Micron’s industry-pioneering advanced NAND technology and performance enables a more responsive mobile experience with true multitasking across apps.
Now available, Micron’s 176-layer UFS 3.1 discrete mobile NAND is offered in 128GB, 256GB and 512GB capacities.
More tech info here:  World’s Most Advanced Flash Memory Goes Mobile
For a few days, we carry a video on Micron LPDDR5 in out tech video spot on the home page